Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys
K. Nishi*, M. Yokoyama, S. -H. Kim, H. Yokoyama, M. Takenaka, S. Takagi
Journal of Applied Physics, 2014
132
Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications
M.-S. Kim*, Y.-H Kim, M. Yokoyama, R. Nakane, S.-H. Kim, M. Takenaka, S. Takagi
Thin Solid Films, 2014
133
Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors
N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
IEEE Transactions on device and materials reliability, 2013
134
Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility
S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
Journal of Applied Physics, 2013
135
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors
N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Applied Physics Letters, 2013
136
High Performance InAs-On-Insulator nMOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
IEEE Transactions on electron device, 2013
137
Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding
M. Yokoyama*, R. Iida, Y. Ikku, S.-H. Lee, S.-H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi
Semiconductor Science and Technology, 2013
138
Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability
S. -H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
IEEE Transactions on electron device, 2013
139
Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering
S. -H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S.-H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
IEEE Transactions on Nanotechnology, 2013
140
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
C.-Y. Chang*, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi