발행물

전체 논문

146

101

Functionalized bonding materials and interfaces for heterogeneously layer-stacked applications
S. –H. Kim*, J. –H. Han, W. J. Choi, J. D. Song, H. -J. Kim
Journal of the Korean physical society, 2019

102

Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors
N. Taoka*, M. Yokoyama, S. –H. Kim, R. Suzuki, R. Iida, M. Takenaka, S. Takagi
Applied Physics Express, 2016

103

Low subthreshold-slope Double-gate GaAs Field-Effect-Transistors on Si
S. –H. Kim*, D. –M. Geum, S. –K. Kim, H. –J. Kim, J. –D. Song, W. J. Choi
IEEE Electron Device Letters, 2016

104

III-V/Ge MOS device technologies for low power integrated systems
S. Takagi*, M. Noguchi, M. Kim, S. –H. Kim, C. –Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, M. Takenaka
Solid State Electronics, 2016

105

Proton irradiation-induced intermixing in InGaAs/GaAs quantum well for non-absorbing mirror
Y. S. Yun, S. –H. Kim, H. –Y. Ryu, M. –S. Park, H. Jang, J. H. Song, W. C. Lim, Y. J. Chang*, W. J. Choi*
Current Applied Physics, 2016

106

Fully Subthreshold Current-Based Characterization of Interface Traps and Surface Potential in III-V-on-Insulator MOSFETs
S. –K. Kim, J. Lee, D. –M. Geum, M. –S. Park, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, D. M. Kim*
Solid State Electronics, 2016

107

Indium-tin-oxide/GaAs schottky barrier solar cells with embedded InAs Quantum dots
H. S. Kim, M. S. Park, S. H. Kim, S. I. Park, J. D. Song, S. H. Kim, W. J. Choi*, J. H. Park*
Thin Solid Films, 2016

108

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications
D. -M. Geum, M.-S. Park, J. –Y. Lim, H. –D. Yang, J. D. Song, C. –Z. Kim, E. Yoon, S. –H. Kim*, W. J. Choi
Scientific reports, 2016

109

Optical Design of ZnO-based Antireflective Layers for Enhanced GaAs Solar Cell Performance
H. –J. Lee, J. –W. Lee, H. –J. Kim, D. –H. Jung, K. –S. Lee, S. –H. Kim, D. –M. Geum, C. Z. Kim, W. J. Choi*, J. M. Baik*
Physical Chemistry Chemical Physics, 2016

110

InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off
M. -S. Park, D. -M. Geum, J. H. Kyhm, J. D. Song, S. -H. Kim*, W. J. Choi*
Optics Express, 2015