Fabrication of a vertically-staked passive-matrix micro-LED array structure for a dual color display
C. –M. Kang, D. –J. Kong, J. –P. Shim, S. –H. Kim, S. –B. Choi, J. –Y. Lee, J. –H. Min, D. –J. Seo, S. –Y. Choi, D. –S. Lee*
Optics Express, 2017
92
Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density
S. –K. Kim, D. –M. Geum, J. –P. Shim, C. –Z. Kim, H. –J. Kim, W. J. Choi, S. –J. Choi, D. H. Kim, S. –H. Kim*, D. M. Kim*
Applied Physics Letters, 2017
93
Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors
I. –P. Ryo, S. –H. Kim (co-first), Y. –H. Song*, J. –D. Song*
Current Applied Physics, 2017
94
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding interface-engineered vertical stacking and surface passivation
D. -M. Geum, S. -K. Kim, C. -M. Kang, S. -H. Moon, J. Kyhm, J. -H. Han, D. -S. Lee, S.- H. Kim*
Nanoscale, 2019
95
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems
D. -M. Geum, S. -H. Kim (co-first), S. -K. Kim, S. -S. Kang, J. -H. Kyhm, J. -D. Song, W. J. Choi*, E. Yoon*
Scientific Reports, 2019
96
Epitaxial Lift-off Technology for Large Size III-V-On-Insulator Substrate
S. Lee, S. -K. Kim, J. -H. Han, J. D. Song, D. -H. Jun, S. -H. Kim*
IEEE Electron Device Letters, 2019
97
Improved Characteristics of MOS Interface between In0.53Ga0.47As and Insulator by H2 Annealing with Pt Gate Electrode
S. -K. Kim, D. -M. Geum, H. -R. Lim, H. Kim, J. -H. Han, D. K. Hwang, J. D. Song, H. -J. Kim, S.- H. Kim*
Applied Physics Letters, 2019
98
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K
S. Kang, D. -M. Geum, K. Kwak, J. -H. Kang, C. -H. Shim, H. Y. Hyun, S. -H. Kim, W. J. Choi, S. -H. Choi, M. -C. Park*, J. D. Song*
Scientific Reports, 2019
99
Impact of bottom-gate biasing on Implant-free Junctionless Ge-on-Insulator n-MOSFETs
H. -R. Lim, S. -K. Kim, J. -H. Han, H. -S. Kim, D. -M. Geum, Y. -J. Lee, B. -K. Ju, H. -J. Kim, S.- H. Kim*
IEEE Electron Device Letters, 2019
100
Highly-stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for Monolithic 3D Integration of InGaAs MOSFETs
S.- H. Kim*, S. –K. Kim, S. –H. Shin, J. –H. Han, D. –M. Geum, J. –P. Shim, S. Lee, H. –S. Kim, G. Ju, J. –D. Song, M. A. Alam, H. –J. Kim