발행물

전체 논문

146

61

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization
S. -H. Kuk, S. Han, D. -H. Lee, B. -H. Kim, J. -S. Shim, M. Park, J. -H. Han, S. -H. Kim*
IEEE Electron Device Letters, 2023

62

Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding
C. -M. Kang, J. -Y. Lee, D. -J. Kong, J. -P. Shim, S. -H. Kim, S. -H. Mun, S. -Y. Choi, M. -D. Park, J. Lee, D. -S. Lee
ACS Photonics, 2018

63

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer
I. –P. Ryo, S. –H. Kim (co-first), D. -M. Geum, W. Lu, Y. –H. Song*, Jesus A. del Alamo, J. –D. Song*
Applied Physics Letters, 2018

64

Simulation Study on the Design of Sub-kT/q Non-Hysteretic Negative Capacitance FET Using Capacitance Matching
P. Bidenko, S. Lee, J. -H. Han, J. -D. Song, S. -H. Kim*
IEEE Journal of the Electron Device Society, 2018

65

Heterogeneous Integration toward Monolithic 3D Chip enabled by III-V and Ge Materials
S. –H. Kim*, S. –K. Kim, J. –P. Shim, D. –M. Geum, G. Ju, H. –S. Kim, H. –J. Lim, H. –R. Lim, J. –H. Han, S. Lee, H. –S. Kim, P. Bidenko, C. –M. Kang, D. –S. Lee, J. –D. Song, W. J. Choi, H. –J. Kim
IEEE Journal of the Electron Device Society, 2018

66

Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Re-usability toward Monolithic 3D Integration with In0.53Ga0.47As channel
S. -K. Kim, J. –P. Shim, D. –M. Geum, C. –Z. Kim, H. –S. Kim, J. D. Song, S. –J. Choi, D. H. Kim, W. J. Choi, H. –J. Kim, D. -M. Kim*, S. –H. Kim*
IEEE Transactions on Electron Device, 2018

67

Room Temperature Operation of Mid-infrared InAs0.81Sb0.19 based Photovoltaic Detectors with an In0.2Al0.8Sb Barrier Layer grown on GaAs Substrate
D. –M. Geum, S. –H. Kim (co-first), S. –S. Kang, H. –S. Kim, H. Park, I. –P. Rho, S. –Y. Ahn, J. –D. Song, W. J. Choi, E. Yoon
Optics Express, 2018

68

Anisotropic Surface Morphology in a Tensile-strained InAlAs layer grown on InP(100) substrates
G. Ju, H. –S. Kim (co-first), J. –P. Shim, S. –K. Kim, B. –H. Lee, S. O. Won, S. –H. Kim, H. –J. Kim*
Thin Solid Film, 2018

69

Low Temperature Material Stacking of Ultra-Thin Body Ge (110)-on-insulator Structure via Wafer Bonding and Epitaxial Lift-off from III-V Templates
J. –P. Shim, H. –S. Kim (co-first), G. Ju, H. –R. Lim, S. –K. Kim, J. –H. Han, H. –J. Kim*, S. –H. Kim*
IEEE Transactions on Electron Device, 2018

70

Verification of Ge-on-insulator structure for Mid-infrared photonics platform
S. –H. Kim*, J. –H. Han (co-first), J. –P. Shim, H. –J. Kim, W. J. Choi
Optical Materials Express, 2018