발행물

전체 논문

146

111

Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment
H. –S. Kim, M. –S. Park, S. –H. Kim, S. –H. Kim, J. D. Song, Y. J. Lee, W. J. Choi*, J. H. Park*
Journal of Vacuum Science & Technology B, 2015

112

High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
M. Noguchi*, S. –H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
Journal of Applied Physics, 2015

113

GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding
S. -H. Kim, D. -M. Geum, M.-S. Park, C. –Z. Kim, W. J. Choi*
Solar Energy Materials & Solar Cells, 2015

114

III–V/Ge channel MOS device technologies in nano CMOS era
S. Takagi*, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi, M. Takenaka
Japanese Journal of Applied Physics, 2015

115

Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate
S. -H. Kim, M.-S. Park, D. -M. Geum, H. Kim, G. Ryu, H. -D. Yang, J. D. Song, C. Z. Kim, W. J. Choi*
Current Applied Physics, 2015

116

In0.53Ga0.47As-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors Utilizing Y2O3 Buried Oxide
S. -H. Kim*, D. -M. Geum, M.-S. Park, W. J. Choi
IEEE Electron Device Letters, 2015

117

InGaAs MOS gate stack formation and the MOS interface properties
S. Takagi*, N. Taoka, R. Suzuki, M. Yokoyama, S.-H. Kim, M. Takenaka
Journal of The Surface Science Society of Japan, 2012

118

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
R. Suzuki*, N. Taoka, M. Yokoyama, S. H. Kim, T. Hoshii, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
Journal of Applied Physics, 2012

119

Characterization of Ni–GaSb Alloys Formed by Direct Reaction of Ni with GaSb
Cezar B. Zota*, S. H. Kim, M. Yokoyama, M. Takenaka, S. Takagi
Applied Physics Express, 2012

120

III-V/Ge high mobility channel integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D
M. Yokoyama*, S.-H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi
Applied Physics Express, 2012