2020 IEEE International Electron Devices Meeting (IEDM)
Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device
2020
2020
The 27th Korean Conference on Semiconductors
Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2
2020
2020
The 27th Korean Conference on Semiconductors
Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack
2020
2020
2019 MRS Spring Meeting & Exhibit
Vapor-Phase Synthesis of Organic-Inorganic Hybrid Gate Dielectric for Flexible Electronics
2019
2019
The 26th Korean Conference on Semiconductors
Y 도핑된 ZrO2 고유전율 박막을 이용한 0.67 nm의 EOT와 매우 낮은 누설 전류를 가지는 Ge 기반 게이트 구조
2019
2019