Abstract The realization of thermally robust, polymer‐based radio‐frequency (RF) switches for flexible millimeter‐wave (mmWave) electronics is a long‐standing challenge due to inherent material instability. Here, a novel high‐performance, thermally stable polymer‐based non‐volatile analogue switch is reported, utilizing an Au/poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3)/Au memristive structure. A gold filamentary conduction model is elucidated that governs the device's resistive switching, enabling analogue switching operations. Fabricated via a wafer‐scale compatible initiated chemical vapor deposition technique, the device overcomes the limitations of prior organic electronics, exhibiting notable high‐temperature stability with a projected state retention of over 10 years at 128.7 °C and robust endurance exceeding 1600 cycles. Furthermore, the switch demonstrates excellent RF performance suitable for mmWave applications, featuring a cutoff frequency of 5.38 THz, low insertion loss (<0.4 dB), high isolation (>18 dB) up to 20 GHz, and stable operation up to 67 GHz. Successful implementation on a flexible substrate confirms its mechanical resilience for wearable systems. This work establishes a viable pathway for robust, polymer‐based analogue switches in advanced flexible RF technologies.

Polymeric sulfur demonstrates immense capabilities as a promising active material for lithium–sulfur batteries (LSBs) owing to their ability to capture lithium polysulfides (LiPS) through the formation of covalent bonds. Herein, we demonstrate an ionic structured polymeric sulfur (IP-S) as a redox mediating matrix, which provides structural stability, an ionic conductive pathway, and a uniform distribution of active materials within the electrode. In particular, the cationic structure of IP-S was attributed to the facilitated LiPS conversion kinetics with the high utilization of sulfur. Consequently, the IP-S electrode delivered the high specific capacity of 1398.8 mAh gsulfur–1 with a low-capacity fading rate of 0.071% over 400 cycles. Moreover, with a high sulfur loading (6.87 mgsulfur cm–2), the IP-S electrode achieved a high initial capacity of 7.23 mAh cm–2. Therefore, this work provides the rational design of ionic structured polymeric sulfur for high performance LSBs as well as the correlation between the ionic structure and the electrochemical property.

Abstract With the recent interest in data storage in flexible electronics, highly reliable charge trap‐type organic‐based non‐volatile memory (CT‐ONVM) has attracted much attention. CT‐ONVM should have a wide memory window, good endurance, and long‐term retention characteristics, as well as mechanical flexibility. This paper proposed CT‐ONVM devices consisting of band‐engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5‐trimethyl‐1,3,5,‐trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT‐ONVM device using the hybrid dielectric stacks outperforms other organic‐based charge trap memory devices and is even comparable in performance to conventional inorganic‐based poly‐silicon/oxide/nitride/oxide/silicon structures devices. The CT‐ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.

Abstract A new strategy for multilayer stacking using charge trapping layer (CTL) is proposed and a new CTL material is synthesized, which contains a trilayer dielectric with the total thickness less than 28 nm, deposited by initiated chemical vapor deposition (iCVD) process. 2.6 nm thick poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3) and 19 nm thick poly(1,4‐butanediol diacrylate) (pBDDA) are employed as tunneling and blocking dielectric layers, respectively. A 6 nm thick ultrathin charge trapping layer containing hydroxyl group is inserted between the tunneling and the blocking layers for stable, long‐term memory operation. For this purpose, a homogeneous copolymer of 1,4‐butanediol diacrylate and 2‐hydroxyethyl acrylate is newly synthesized. The fabricated memory with the trilayer dielectric shows larger than 5.8 V of memory window at low programming/erasing voltage of 16 V. The retention characteristics of the low‐power organic memory device is improved significantly with the drain current decrease less than 0.40 order after 10 8 s, corresponding to one of the longest retention time periods obtained from organic NVM reported to date. The low‐power organic NVM could also be integrated on flexible substrate, which is fully operational even under 2.72% of applied strain.

The rapid reduction of interconnect critical dimension (CD) in logic devices and the increased contact/via height in 3-D memory devices have led to problematic gap-filling processes and the occurrence of void defects, resulting in increased contact/via resistance or complete contact/via failure. However, the low thermal budget of the back-end-of-line (BEOL) stage limits the temperature range available for conventional thermal processes, such as furnace annealing and rapid thermal annealing. This article presents an approach to address contact/via failures, using nanosecond green laser annealing (NGLA) with a low energy fluence (= 0.1 J/cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${}^{{2}}\text {)}$</tex-math> </inline-formula>. By exploiting NGLA’s ability to selectively induce high temperatures for ultrashort durations on metal interconnects, we have developed a process that effectively recovers contact/via failures without compromising the performance of both front-end-of-line (FEOL) and BEOL stages.

Lithium–sulfur batteries (LSBs) suffer from sluggish lithium polysulfides (LiPS) conversion and severe interfacial instability, which limit their rate performance and cycle life. Herein, we report a multifunctional interlayer comprising Mo 2 C nanoparticles confined within a nitrogen‐ and phosphorus‐codoped amorphous carbon matrix supported on reduced graphene oxide (MNPG). H 3 PMo 12 O 40 was chosen as a final polyoxometalate (POM) precursor because it was transformed into the tubular nanoparticles, while Na 3 PMo 12 O 40 was converted to irregular micrometer‐sized particles. In particular, the hierarchical structure of MNPG is synthesized via electrostatic self‐assembly of POM and pyrrole on graphene oxide, followed by thermal transformation. The embedded Mo 2 C domains act as efficient redox mediators that accelerate LiPS conversion, while the polar doped carbon shell suppresses parasitic reactions and facilitates ion transport. Consequently, the MNPG‐coated separator allows LSBs to deliver a high specific capacity of 1549 mAh g −1 at 0.1 C and 802 mAh g −1 at 5.0 C, along with 81.1% capacity retention after 200 cycles. This study provides a straightforward and effective interfacial engineering strategy that combines redox‐mediating domains and transport regulation within a unified structure to overcome key bottlenecks of LSBs.

As semiconductor devices continue to demand higher performance and density, Cu/polymer hybrid structures have gained significant attention due to their potential to replace conventional SiO₂ dielectrics. In this study, we explore the optimization of dry etching processes for 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane (pV<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>) a low-dielectric constant polymer (k=2.2), used in Cu/polymer hybrid structures. By employing initiated Chemical Vapor Deposition (iCVD) high purity, pV<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub>D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films with a thickness of 200 nm were deposited. Various gas mixtures, including O₂, CF₄, and Ar, were used for dry etching to evaluate the optimal etching conditions. Results show that the most anisotropic etching occurred with an O₂/Ar gas mixture, achieving an etching depth of 200 nm and near-vertical sidewalls. Detailed analysis of the etching mechanism was conducted using Gibbs free energy calculations and X-ray photoelectron spectroscopy (XPS). The findings of this study provide valuable insights into the fabrication of high-density, high-performance Cu/polymer hybrid structures for next-generation semiconductor devices.

Abstract The realization of thermally robust, polymer‐based radio‐frequency (RF) switches for flexible millimeter‐wave (mmWave) electronics is a long‐standing challenge due to inherent material instability. Here, a novel high‐performance, thermally stable polymer‐based non‐volatile analogue switch is reported, utilizing an Au/poly(1,3,5‐trimethyl‐1,3,5‐trivinyl cyclotrisiloxane) (pV3D3)/Au memristive structure. A gold filamentary conduction model is elucidated that governs the device's resistive switching, enabling analogue switching operations. Fabricated via a wafer‐scale compatible initiated chemical vapor deposition technique, the device overcomes the limitations of prior organic electronics, exhibiting notable high‐temperature stability with a projected state retention of over 10 years at 128.7 °C and robust endurance exceeding 1600 cycles. Furthermore, the switch demonstrates excellent RF performance suitable for mmWave applications, featuring a cutoff frequency of 5.38 THz, low insertion loss (&lt;0.4 dB), high isolation (&gt;18 dB) up to 20 GHz, and stable operation up to 67 GHz. Successful implementation on a flexible substrate confirms its mechanical resilience for wearable systems. This work establishes a viable pathway for robust, polymer‐based analogue switches in advanced flexible RF technologies.

Polymeric sulfur demonstrates immense capabilities as a promising active material for lithium–sulfur batteries (LSBs) owing to their ability to capture lithium polysulfides (LiPS) through the formation of covalent bonds. Herein, we demonstrate an ionic structured polymeric sulfur (IP-S) as a redox mediating matrix, which provides structural stability, an ionic conductive pathway, and a uniform distribution of active materials within the electrode. In particular, the cationic structure of IP-S was attributed to the facilitated LiPS conversion kinetics with the high utilization of sulfur. Consequently, the IP-S electrode delivered the high specific capacity of 1398.8 mAh gsulfur–1 with a low-capacity fading rate of 0.071% over 400 cycles. Moreover, with a high sulfur loading (6.87 mgsulfur cm–2), the IP-S electrode achieved a high initial capacity of 7.23 mAh cm–2. Therefore, this work provides the rational design of ionic structured polymeric sulfur for high performance LSBs as well as the correlation between the ionic structure and the electrochemical property.

Abstract With the recent interest in data storage in flexible electronics, highly reliable charge trap‐type organic‐based non‐volatile memory (CT‐ONVM) has attracted much attention. CT‐ONVM should have a wide memory window, good endurance, and long‐term retention characteristics, as well as mechanical flexibility. This paper proposed CT‐ONVM devices consisting of band‐engineered organic–inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5‐trimethyl‐1,3,5,‐trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT‐ONVM device using the hybrid dielectric stacks outperforms other organic‐based charge trap memory devices and is even comparable in performance to conventional inorganic‐based poly‐silicon/oxide/nitride/oxide/silicon structures devices. The CT‐ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.