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Photoluminescence characteristics of Si nano-dots jin th SiNx film fabricated at a low temperature(<200)

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Characteristics of resistance change of Pr0.7Ca0.3MnO3 film with SrRuO3 buffer layer

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Photoluminescence chracteristics of SiNx thin film deposited by PECVD at low temperature

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Direct Deposition of microcrystalline Si Films at Low Temperatures (<200) by Catalytic CVD

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Optical & Electrical Properties of SiNxfilms deposited by Cat-CVD at a Low Temperature (<200)