,

The electrical characteristics of floating gate silicon-on-insulator meemory device with Si nanoclusters by digital pulse-type gas feeding method in LPCVD

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The characteristics of NFGM with Ni nano-dots

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Si-nanocrystaliline nonvoiatile floating gate memory device basesd on Schottky barrier Tunneling Transistor

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The electrical properties of NVM with Si nanocluster formed by a pulse-type gas feeding technique in the LPCVD system

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Effects of growth temperature and post-annealing on Pr0.7Ca0.3MnO3 film with SrRuO3 buffer layer for ReRAM applicatons