,

The electrical properties of n-doped Si nanocrystal floating gate nonvolatile memory

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Si-Nanocrystal Nonvolatile Memory Devices By Using Schottky Barrier Structure

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Resistance switching of Pr0.7Ca0.3MnO3 film with SrRuO3 buffer layer for Resistance Random access Memory

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Tetra Hydro Furna(THF) 열분해를 이용한 고순도 이중벽 구조 탄소나노튜브의 합성

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50nm thick as-deposited poly silicon as an active layer of TFT for driving AM-OLEDs prepared at low temperature (<200°C) using Cat-CVD