발행물
컨퍼런스
9th International Symposium on Semiconductor Light Emitting Devices
2012
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Analysis of Bias-Dependent Modulated Photocurrent Spectroscopy on InGaN/GaN Light-Emitting Diodes
International Conference on Metal Organic Vapor Phase Epitaxy
Novel Method of Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at Room Temperature
Residual Stress of GaN Epitaxial Layers Grown on Sapphire Substrates: Theoretical and Experimental Analyses
Steady-State Photocapacitance Study of Deep-Level Defect States In GaN Epitaxial Layers Grown on Sapphire Substrates
제 5 회 LED.반도체조명학회 학술대회
InGaN 양자우물 LED 소자의 efficiency droop 과 발광, 비발광 재결합의 역할