발행물
컨퍼런스
LED KOREA 2010
2010
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Separate measurement of radiative and nonradiative lifetimes in GaN LEDs by time-resolved photoluminescence
LED 2010
Temperature and Light Distribution in GaN-based Light-emitting Diodes
Analysis of Electrical Properties in InGaN/GaN Light-emitting Diode with Forward and Reverse Biased
SPIE Photonics West 2010
A measurement method of internal quantum efficiency in InGaN light-emitting diodes without any parameter assumptions
Explanation of the efficiency droop in InGaN multiple quantum well light-emitting diodes by the reduced radiative recombination probability