발행물

전체 논문

354

311

Study of Work-Function Variation for High-kappa/Metal-Gate Ge-Source Tunnel Field-Effect Transistors
신창환, 박정동, 남효현, 이영택
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015

312

Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor
신창환, 이주한, 박슬기
IEICE ELECTRONICS EXPRESS, 2015

313

Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect Transistor
신창환, 남효현, 이영택, 박슬기, 이현재
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015

314

Worst Case Sampling Method to Estimate the Impact of Random Variation on Static Random Access Memory
신창환, 이교섭
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015

315

Experimental observation of voltage amplification using negative capacitance for sub-60mV/decade CMOS devices
신창환, 조재성
CURRENT APPLIED PHYSICS, 2015

316

Effect of the Si/TiO2/BiVO4 Heterojunction on the Onset Potential of Photocurrents for Solar Water Oxidation
Yun Jeong Hwang, Oh-Shim Joo, Byoung Koun Min, 신창환, Sang Youn Chae, Hyejin Jung
ACS APPLIED MATERIALS INTERFACES, 2015

317

Symmetric tunnel field-effect transistor (S-TFET)
신창환, 조민희, 남효현
CURRENT APPLIED PHYSICS, 2015

318

Impact of temperature on negative capacitance field-effect transistor
신창환, 조재성
ELECTRONICS LETTERS, 2015

319

The Efficacy of Metal-Interfacial Layer-Semiconductor Source/Drain Structure on Sub-10-nm n-Type Ge FinFET Performances
Hyun-Yong Yu, Saraswat C. Krishna, Jong-Kook Kim, Jin-Hong Park, 신창환, 남효현, Gwang-Sik Kim, Jeong-Kyu Kim, Byungjin Cho
IEEE ELECTRON DEVICE LETTERS, 2014

320

A New Slit-Type Vacuum-Channel Transistor
박인준, 신창환, 전석기
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014