발행물

전체 논문

354

321

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2-x Interfacial Layer to Metal/Ge Contact
Hyun-Yong Yu, Krishna C. Saraswat, Jin-Hong Park, 신창환, 조재성, Seung-Hwan Kim, Jeong-Kyu Kim, Gwang-Sik Kim
IEEE ELECTRON DEVICE LETTERS, 2014

322

Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application
신형철, 신창환, 이현슬, 문덕영
IEICE ELECTRONICS EXPRESS, 2014

323

Analytical Study of Interfacial Layer Doping Effect on Contact Resistivity in Metal-Interfacial Layer-Ge Structure
신창환, 유현용, Krishna C. Saraswat, 박진홍, 김광식, 김정규
IEEE ELECTRON DEVICE LETTERS, 2014

324

Experimental demonstration of a ferroelectric FET using paper substrate
박병은, Yun Jeong Hwang, Wan-Gyu Lee, Seung-Hyun Kim, Minseo Park, Hiroshi Ishiwara, Dong-Joo Kim, Shun-Ichiro Ohmi, Eisuke Tokumitsu, 한승필, 한대희, 이광근, 신창환
IEICE ELECTRONICS EXPRESS, 2014

325

Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation
신창환, 남효현
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014

326

State-of-the-art silicon device miniaturization technology and its challenges
신창환
IEICE ELECTRONICS EXPRESS, 2014

327

Study of High-k/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept
신창환, 남효현
IEEE ELECTRON DEVICE LETTERS, 2013

328

Impact of Gate Line-Edge Roughness (LER) Versus Random Dopant Fluctuations (RDF) on Germanium-Source Tunnel FET Performance
Tsu-Jae King Liu, 신창환, Sung Hwan Kim, Nattapol Damrongplasit
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013

329

Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size
남효현, 신창환
IEICE ELECTRONICS EXPRESS, 2013

330

Impact of Using Double-Patterning Versus Single-Patterning on Threshold Voltage (V-TH) Variation in Quasi-Planar Tri-Gate Bulk MOSFETs
박인준, 신창환
IEEE ELECTRON DEVICE LETTERS, 2013