신창환 교수 연구실
연구실 정보 수정하기
홈
기본 정보
연구 영역
프로젝트
발행물
구성원
발행물
논문
저서
컨퍼런스
전체 논문
354
필터 설정하기
341
Tri-gate bulk MOSFET design for CMOS scaling to the end of the roadmap
Liu, Tsu-Jae King, 신창환, Ikeda, Shuji, Wetzel, Jeffrey, Gebara, Gabriel, Takeuchi, Hideki, Moroz, Victor, Lu, Qiang, Sun, Xin
IEEE ELECTRON DEVICE LETTERS, 2008
342
Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
문승준, 신창환, 신창환, 윤찬근
NANO CONVERGENCE, 202006
343
Tapered Coating for Nano-electro-mechanical (NEM) Relay to Improve Energy-delay Product
신창환, 최기훈
Journal of Semiconductor Technology and Science, 201806
344
Comparative Study of Negative Differential Capacitance in Ferroelectric Capacitors: P(VDF0.75-TrFE0.25) and P(VDF0.50-TrFE0.50)
신창환, 구한솔
Journal of Semiconductor Technology and Science, 201806
345
Comparative Study of Negative Capacitance in Ferroelectric Capacitors: P(VDF0.75-TrFE0.25) Versus Pb(Zr, Ti)O3
신창환, 구한솔
Journal of Semiconductor Technology and Science, 201804
346
Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting
신창환, 박정동, 조가람
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201606
347
Impact of Trap Position on Random Telegraph Noise in a 70-angstrom Nanowire eld-Effect Transistor
Hyungcheol Shin, 신창환, 조가람, Hyunseul Lee
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201604
348
Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM)
신창환, 박정동, 이교섭, 이현재, 조재성, 오상헌
Journal of Semiconductor Technology and Science, 201506
349
Highly scalable NAND flash memory cell design embracing backside charge storage
신창환, 박인준, Wookhyun Kwon
Journal of Semiconductor Technology and Science, 201504
350
Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation
박슬기, 남효현, 신창환
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201408
31
32
33
34
35
36