발행물

전체 논문

354

341

Tri-gate bulk MOSFET design for CMOS scaling to the end of the roadmap
Liu, Tsu-Jae King, 신창환, Ikeda, Shuji, Wetzel, Jeffrey, Gebara, Gabriel, Takeuchi, Hideki, Moroz, Victor, Lu, Qiang, Sun, Xin
IEEE ELECTRON DEVICE LETTERS, 2008

342

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
문승준, 신창환, 신창환, 윤찬근
NANO CONVERGENCE, 202006

343

Tapered Coating for Nano-electro-mechanical (NEM) Relay to Improve Energy-delay Product
신창환, 최기훈
Journal of Semiconductor Technology and Science, 201806

344

Comparative Study of Negative Differential Capacitance in Ferroelectric Capacitors: P(VDF0.75-TrFE0.25) and P(VDF0.50-TrFE0.50)
신창환, 구한솔
Journal of Semiconductor Technology and Science, 201806

345

Comparative Study of Negative Capacitance in Ferroelectric Capacitors: P(VDF0.75-TrFE0.25) Versus Pb(Zr, Ti)O3
신창환, 구한솔
Journal of Semiconductor Technology and Science, 201804

346

Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting
신창환, 박정동, 조가람
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201606

347

Impact of Trap Position on Random Telegraph Noise in a 70-angstrom Nanowire eld-Effect Transistor
Hyungcheol Shin, 신창환, 조가람, Hyunseul Lee
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201604

348

Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM)
신창환, 박정동, 이교섭, 이현재, 조재성, 오상헌
Journal of Semiconductor Technology and Science, 201506

349

Highly scalable NAND flash memory cell design embracing backside charge storage
신창환, 박인준, Wookhyun Kwon
Journal of Semiconductor Technology and Science, 201504

350

Performance and Variation-Immunity Benefits of Segmented-Channel MOSFETs (SegFETs) Using HfO2 or SiO2 Trench Isolation
박슬기, 남효현, 신창환
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 201408