An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

Effects of Nitrogen Addition on the Properties of Ge-Doped SbTe Phase Change Memory Material

Time-resolved analysis of the set process in an electrical phase-change memory device

Nonvolatile memory based on reversible phase changes between fcc and hcp

Switching behavior of indium selenide-based phase-change memory cell

Switching characterization and failure analysis of indium selenide (In2Se3) based phase change memory

Indium selenide (In2Se3) thin film for phase-change memory

Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

The effect of r.f. substrate bias on the properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition

Substrate bias on the properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition