발행물

전체 논문

43

31

Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge

32

Lower voltage operations of a phase change memory device with a highly resistive TiON layer

33

The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film

34

Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film

35

Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization

36

Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition
2003

37

One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)

38

Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

39

Multilayer diffusion barrier for copper metallization using a thin interlayer metal

40

Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films