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31
Ion energy distribution change at the transition of power-coupling modes in an immersed-coil-type inductively coupled Ar discharge
32
Lower voltage operations of a phase change memory device with a highly resistive TiON layer
33
The reaction sequence and microstructure evolution of an MgB2 layer during post annealing of amorphous boron film
34
Growth Kinetics of MgB2 Layer and Interfacial MgO Layer During ex situ Annealing of Amorphous Boron Film
35
Characterization of atomic-layer-deposited WNxCy thin films as a diffusion barrier for copper metallization
36
Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition
2003
37
One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15m)
38
Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization
39
Multilayer diffusion barrier for copper metallization using a thin interlayer metal
40
Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films
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