,

Crystallization and electrical properties of atomic layer depositied HfO2 films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) and O3

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Physical and Electrical Properties of atomic layer deposited HfO2 Films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) as Precursor and O3 as Oxidant

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Resistive Switching in TiO2 Thin Films

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Characteristics of dielectric films deposited by ALD for embedded capacitors in printed circuit board

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Hf([N(CH3)(C2H5)]3[OC(CH3)3]) 전구체와 O3 산화제를 이용하여 ALD 방법으로 증착한 HfO2 유전박막의 결정화 특성 연구