발행물

전체 논문

60

31

Comparative Study of Various Latch-Type Sense Amplifiers
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2014

32

Self-Timed Pulsed Latch for Low Voltage Operation with 77% Hold Time Reduction
H. Jeong, J. Park, S.C. Song, S.-O. Jung
IEEE Journal of Solid-State Circuits

33

Impact of fin thickness and height on Read Stability / Write Ability in Tri-Gate FinFET based SRAM
J. Lee, H. Jeong, Y.H. Yang, J.S. Kim, S.O. Jung
International SoC Design conference, 2012

34

SRAM Read Stability and Write Ability Metrics in the Aspect of Accurate Yield Estimation with Supply Voltage Scaling in 22nm FinFET Based SRAM
H. Jeong, Y.H. Yang, J.H. Lee, J.S. Kim, S.O. Jung
International Conference on Electronics, Information and Communication, 2012

35

Static Read Stability and Write Ability Metrics in FinFET based SRAM Considering Read and Write Assist Circuits
H. Jeong, Y.H. Yang, J.H. Lee, J.S. Kim, S.O. Jung
International Conference on Electronics, Circuits, and Systems, 2012

36

Comparative Analysis of 1:1:2 and 1:2:2 FinFET SRAM Bit-Cell Using Assist Circuit
K. Kang, H. Jeong, J. Lee, S.O. Jung
International SoC Design Conference, 2013

37

Read and Write Yield Improvement of FinFET Based SRAM Using Non-Minimal Gate Length
J. Lee, H. Jeong, K. Kang, Y. Yang, J. Kim, S.O. Jung
International Technical Conference on Circuits/Systems, Computers and Communications, 2013

38

Source Follower Based Single Ended Sense Amplifier for Large Capacity SRAM Circuit
D.H. Jung, H. Jeong, T. Song, G. Kim, S.O. Jung
International SoC Design Conference, 2013

39

Access Transistor of STT-RAM Cell in 22-nm Technology Node
H. Jeong, T. Kim, T. Song, G. Kim, S.O. Jung
International SoC Design Conference, 2014

40

Comparative Analysis of Using Planar MOSFET and FinFET as Access Transistor of STT-RAM Cell in 22-nm Technology Node
B. Song, T. Na, H. Jeong, S. H. Kang, J. P. Kim, S. O. Jung
International SoC Design Conference, 2014