발행물

논문
특허
저서
컨퍼런스

전체 논문

2601

1431

A sub-0.5V operating RF low noise amplifier using tunneling-FET
강명곤
Japanese Journal of Applied Physics, 2017

1432

Investigation of capture and emission dependence between individual traps from complex random telegraph signal noise analysis
Younghwan Son, Yoon Kim, Myounggon Kang
IEICE Electronics Express, 2017

1433

Comparison of dual- k spacer and single- k spacer for single NWFET and 3-stack NWFET
Hyungwoo Ko, Jongsu Kim, Min‐Soo Kim, Myounggon Kang, Hyungcheol Shin
Solid-State Electronics, 2017

1434

GIDL analysis of the process variation effect in gate-all-around nanowire FET
Shin-Keun Kim, Youngsoo Seo, Jangkyu Lee, Myounggon Kang, Hyungcheol Shin
Solid-State Electronics, 2017

1435

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs
Kyul Ko, Dokyun Son, Myounggon Kang, Hyungcheol Shin
2017

1436

Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
Kyul Ko, Dokyun Son, Myounggon Kang, Hyungcheol Shin
Solid-State Electronics, 2017

1437

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM
Youngsoo Seo, Shin-Keun Kim, Kyul Ko, Changbeom Woo, Min‐Soo Kim, Jangkyu Lee, Myounggon Kang, Hyungcheol Shin
Solid-State Electronics, 2017

1438

Analysis on extension region in nanowire FET considering RC delay and electrical characteristics
Jongsu Kim, Changbeom Woo, Myounggon Kang, Hyungcheol Shin
2017

1439

Analysis of parasitic capacitance and performance in gate-ail-around and tri-gate channel vertical FET
Youngsoo Seo, Myounggon Kang, Hyungcheol Shin
2017

1440

Improvement of dual-Λ spacer for nanowire-FETs considering circuit delay and electricstatic controllability
Hyungwoo Ko, Jongsu Kim, Dokyun Son, Myounggon Kang, Hyungcheol Shin
2017