,

All-Te Field Effect Transistor with Layer-Engineered Homojunction

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High-k Nb2O5/2D Metallic NbS2 Gate Stack Architecture via Thermal Conversion of NbS2

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Contact Resistance Reduction in Tellurium Field-Effect Transistors via Al2O3 Interlayers

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Correlation Study between Raman Vibration Modes and Electrical Properties of 2D In2Se3

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Contact Resistance Reduction of Te Transistor Using UVO Treatment