,

Reduction of Contact resistance in Tellurium Field-Effect Transistor Achieved by Graphene Interlayer

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MoS2 Field Effect Transistor with Graphene-embedded Al2O3 Gate Dielectric Structure

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Dielectric Properties of MIS Capacitors Utilizing the Nb2O5 Oxidized from 2D NbS2

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High Responsive InSe Based Photodetector Using RF Magnetron Sputtering

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The interface and surface modulation of 2D TMD materials for enabling heterosynaptic devices