발행물

전체 논문

164

131

Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy
Song, SH (Song, Seung Hyun), Joo, MK (Joo, Min-Kyu), Neumann, M (Neumann, Michael), Kim, H (Kim, Hyun), Lee, YH (Lee, Young Hee)
NATURE COMMUNICATIONS, 201712

132

Degradation pattern of black phosphorus multilayer field-effect transistors in ambient conditions: Strategy for contact resistance engineering in BP transistors
Lee, BC (Lee, Byung Chul), Kim, CM (Kim, Chul Min), Jang, HK (Jang, Ho-Kyun), Lee, JW (Lee, Jae Woo), Joo, MK (Joo, Min-Kyu), Kim, GT (Kim, Gyu-Tae)
APPLIED SURFACE SCIENCE, 201710

133

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
Ji, H (Ji, Hyunjin), Joo, MK (Joo, Min-Kyu), Yi, H (Yi, Hojoon), Choi, H (Choi, Homin), Gul, HZ (Gul, Hamza Zad), Ghimire, MK (Ghimire, Mohan Ku, Lim, SC (Lim, Seong Chu)
ACS APPLIED MATERIALS INTERFACES, 201708

134

Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets
Lee, Y (Lee, Yourack), Joo, MK (Joo, Min-Kyu), Le, VT (Le, Viet Thong), Ovalle-Robles, R (Ovalle-Roble, Lepro, X (Lepro, Xavier), Lima, MD (Lima, Marcio D.), Suh, DG (Suh, Daniel G.), Yu, HY (Yu, Han Young), Lee, YH (Lee, Young Hee), Suh, D (Suh, Dongseok)
ACS APPLIED MATERIALS INTERFACES, 201708

135

Feasibility of ultra-sensitive 2D layered Hall elements
Joo, MK (Joo, Min-Kyu), Kim, J (Kim, Joonggyu), Lee, G (Lee, Gwanmu), Kim, H (Kim, Hyun), Lee, YH (Lee, Young Hee), Suh, D (Suh, Dongseok)
2D MATERIALS, 201706

136

Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering
Ji, H (Ji, Hyunjin), Lee, G (Lee, Gwanmu), Joo, MK (Joo, Min-Kyu), Yun, Y (Yun, Yoojoo), Yi, H (Yi, Hojoon), Park, JH (Park, Ji-Hoon), Suh, D (Suh, Dongseok), Lim, SC (Lim, Seong Chu)
APPLIED PHYSICS LETTERS, 201705

137

Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Moon, BH (Moon, Byoung Hee), Han, GH (Han, Gang Hee), Kim, H (Kim, Hyun), Choi, H (Choi, Homin), Bae, JJ (Bae, Jung Jun), Kim, J (Kim, Jaesu), Jin, Y (Jin, Youngjo), Jeong, HY (Jeong, Hye Yun), Joo, MK (Joo, Min-Kyu), Lee, YH (Lee, Young Hee), Lim, SC (Lim, Seong Chu)...Mor
ACS APPLIED MATERIALS INTERFACES, 201703

138

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
Joo, MK (Joo, Min-Kyu), Moon, BH (Moon, Byoung Hee), Ji, HJ (Ji, Hyunjin), Han, GH (Han, Gang Hee), Kim, H (Kim, Hyun), Lee, G (Lee, Gwanmu), Lim, SC (Lim, Seong Chu), Suh, D (Suh, Dongseok), Lee, YH (Lee, Young Hee)
ACS APPLIED MATERIALS INTERFACES, 201702

139

Strong Coulomb scattering effects on low frequency noise in monolayer WS2 field-effect transistors
Joo, MK (Joo, Min-Kyu), Yun, Y (Yun, Yoojoo), Yun, S (Yun, Seokjoon), Lee, YH (Lee, Young Hee), Suh, D (Suh, Dongseok)
APPLIED PHYSICS LETTERS, 201610

140

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Hetero-structure
Joo, MK (Joo, Min-Kyu), Moon, BH (Moon, Byoung Hee), Ji, H (Ji, Hyunjin), Han, GH (Han, Gang Hee), Kim, H (Kim, Hyun), Lee, G (Lee, Gwanmu), Lim, SC (Lim, Seong Chu), Suh, D (Suh, Dongseok), Lee, YH (Lee, Young Hee)
NANO LETTERS, 201610