Effect of multi-cycle annealing on the C49.C54 phase transformation in TiSi2 thin film

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Effect of hydrogen and temperature on the resistivity of an aluminum-2 wt% copper thin film

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2

Effect of heat transfer on the C49.C54 phase transformation in TiSi2 thin film

Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC.

Effect of PMA on effective fixed charge in thermally grown oxide on 6H-SiC

Characterization of the imidization process of Low K-fluorinated polymide film during thermal curing

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2 Materials Science and Engineering B Volume 68, Issue 2 , 27 December 1999, Pages 99-103

Effect of heat transfer on the C49.C54 phase transformation in TiSi2 thin film Materials Science in Semiconductor Processing Volume 2, Issue 4 , 1 December 1999, Pages 329-333