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81
Effect of Pre-cooling Treatment on the Formation of the Low Resistivity Titanium Silicide
Journal of Vacuum Science and Technology B, 2001.04
82
Properties of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure
Materials Science and Engineering B, 2001.06
83
FORMATION MECHANISM AND CRYSTALLOGRAPHIC RELATIONSHIP OF EPITAXY Ti AND Al THIN FILMS IN IONIZED METAL PLASMA DEPOSITION
Surface Review and Letters, 2001
84
STUDY OF Cu DIFFUSION IN Cu/TaN/SiO2/Si MULTILAYER STRUCTURES
Surface Review and Letters, 2001
85
High Density Diffusion Barrier of Ionised Metal Plasma Deposited Ti in Al-0.5%Cu/Ti/SiO2/Si Structure
J. Vacuum Sci. Tech. B, 2001
86
Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure
Journal of Materials Science, 2000.12
87
Irreversible hydrogen effects on resistivity of sputtered copper films
Journal of Materials Science, 2000.12
88
Characterization of interfacial reactions between ionized metal plasma deposited Al.0.5 wt.% Cu and Ti on SiO2
Materials Science and Engineering B, 2000.08
89
Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2
Materials Science in Semiconductor Processing, 2000.06
90
Study of diffusion barrier properties of ternary alloy (TixAlyNz) in Cu/TixAlyNz/SiO2/Si thin film structure
Materials Science in Semiconductor Processing, 2000.06
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