Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure

FORMATION ENANCEMENT OF THE C54-TiSi2 BY A MULTI-CYCLE PRE-COOLING TREATMENT

FORMATION OF SEMI-COHERENT INTERFACE IN TiSi2/Si STRUCTURE

Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Study on electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure

Study of electroplated copper thin film and its interfacial reactions in the EPCu/IMPCu/IMPTaN/SiO2/Si multilayer structure

Effective Enhancement of C54 TiSi2 Phase Formation with Multi-Thermal-Shock Processing at 600C

Interfacial reactions and mechanism of C54 TiSi2 phase formation enhanced by multi-thermal shock processing. Appl. Phys. Lett., L01-0699, 2001