발행물
컨퍼런스
Symposium on VLSI Technology 2011
2011
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Offset buried metal gate vertical floating body memory technology with excellent retention time for DRAM application
Symposium on VLSI Technology, 2011
Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array
IEEE 2011 3rd IEEE International Memory Workshop (IMW)
The Effect of Tunnel Barrier at Resistive Switching Device for Low Power Memory Applications
the 33rd International Symposium for Testing and failure analysis
Analysis of Bridge Failure between PPG and LPP in Fin Cell Transistor
2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA 2011)
Chances and challenges of emerging memories for DRAM application (Invited)