발행물
컨퍼런스
International Electron Devices Meeting (IEDM)
2010
,
Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application
Symposium on VLSI Technology, 2010
Vertical Double Gate Z-RAM technology with remarkable low voltage operation for DRAM application
2009
Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications
Symposium on VLSI Technology , 2009
Highly scalable Z-RAM with remarkably long data retention for DRAM application
Non-volatile memory technology (NVMT), 2008
2008
Research on switching property of an oxide/copper sulfide hybrid memory