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141
Ferroelectricity of pure-HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application
APPLIED SURFACE SCIENCE, 202201
142
Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices
IEEE ELECTRON DEVICE LETTERS, 202201
143
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
CHAOS SOLITONS & FRACTALS, 202112
144
A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications
NANOTECHNOLOGY, 202111
145
Conduction mechanism effect on physical unclonable function using Al2O3/TiOx memristors
CHAOS SOLITONS & FRACTALS, 202111
146
Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior
ACS APPLIED ELECTRONIC MATERIALS, 202109
147
A novel physical unclonable function using pure HfOx ferroelectric tunnel junction array for security applications
유준수, 민경규, 김연우, 김시현, 황성민, 김태현, 김창하, 김형진, 이종호, 권대웅, 박병국
NANOTECHNOLOGY, 202109
148
Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 202108
149
Selected bit-line current PUF: A non-invasive hardware security primitive based on a memristor crossbar array
IEEE ACCESS, 202108
150
4k-memristor analog-grade passive crossbar circuit
NATURE COMMUNICATIONS, 202108
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