발행물

전체 논문

217

141

Ferroelectricity of pure-HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application
APPLIED SURFACE SCIENCE, 202201

142

Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices
IEEE ELECTRON DEVICE LETTERS, 202201

143

Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
CHAOS SOLITONS & FRACTALS, 202112

144

A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications
NANOTECHNOLOGY, 202111

145

Conduction mechanism effect on physical unclonable function using Al2O3/TiOx memristors
CHAOS SOLITONS & FRACTALS, 202111

146

Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior
ACS APPLIED ELECTRONIC MATERIALS, 202109

147

A novel physical unclonable function using pure HfOx ferroelectric tunnel junction array for security applications
유준수, 민경규, 김연우, 김시현, 황성민, 김태현, 김창하, 김형진, 이종호, 권대웅, 박병국
NANOTECHNOLOGY, 202109

148

Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 202108

149

Selected bit-line current PUF: A non-invasive hardware security primitive based on a memristor crossbar array
IEEE ACCESS, 202108

150

4k-memristor analog-grade passive crossbar circuit
NATURE COMMUNICATIONS, 202108