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전체 논문

217

181

Design Optimization of 1T Dynamic Random Access Memory Based on Pillar Type Tunneling Field-Effect Transistor with Surrounding Gate Structure
Kim, H (Kim, Hyungjin), Hwang, S (Hwang, Sungmin), Park, BG (Park, Byung-Gook)
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 201705

182

Compact Neuromorphic System With Four-Terminal Si-Based Synaptic Devices for Spiking Neural Networks
Park, J (Park, Jungjin), Kwon, MW (Kwon, Min-Woo), Kim, H (Kim, Hyungjin), Hwang, S (Hwang, Sungmin), Lee, JJ (Lee, Jeong-Jun), Park, BG (Park, Byung-Gook)
IEEE TRANSACTIONS ON ELECTRON DEVICES, 201705

183

Integrate-and-Fire (IF) Neuron Circuit Using Resistive-Switching Random Access Memory (RRAM)
Kwon, MW (Kwon, Min-Woo), Kim, S (Kim, Sungjun), Kim, MH (Kim, Min-Hwi), Park, J (Park, Jungjin), Kim, H (Kim, Hyungjin), Hwang, S (Hwang, Sungmin), Park, BG (Park, Byung-Gook)
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 201705

184

Combination of volatile and non-volatile functions in a single memory cell and its scalability
Kim, H (Kim, Hyungjin), Hwang, S (Hwang, Sungmin), Lee, JH (Lee, Jong-Ho), Park, BG (Park, Byung-Gook)
JAPANESE JOURNAL OF APPLIED PHYSICS, 201704

185

Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement
Kim, H (Kim, Hyungjin), Lee, JH (Lee, Jong-Ho), Park, BG (Park, Byung-Gook)
APPLIED PHYSICS EXPRESS, 201608

186

Neuromorphic System Based on CMOS Inverters and Si-Based Synaptic Device
Park, J (Park, Jungjin), Kwon, MW (Kwon, Min-Woo), Kim, H (Kim, Hyungjin), Park, BG (Park, Byung-Gook)
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 201605

187

Self-Boosted Tunnel Field-Effect Transistor Using Nitride Charge Trapping Layer for Low Supply Voltage Operation
Kim, H (Kim, Hyungjin), Kwon, DW (Kwon, Dae Woong), Kwon, MW (Kwon, Min-Woo), Park, J (Park, Jungjin), Park, BG (Park, Byung-Gook)
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 201605

188

Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure
Kim, H (Kim, Hyungjin), Park, J (Park, Jungjin), Kwon, MW (Kwon, Min-Woo), Hwang, S (Hwang, Sungmin), Park, BG (Park, Byung-Gook)
JAPANESE JOURNAL OF APPLIED PHYSICS, 201604

189

Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications
Kim, S (Kim, Sungjun), Kim, H (Kim, Hyungjin), Jung, S (Jung, Sunghun), Kim, MH (Kim, Min-Hwi), Lee, SH (Lee, Sang-Ho), Cho, S (Cho, Seongjae), Park, BG (Park, Byung-Gook)
JOURNAL OF ALLOYS AND COMPOUNDS, 201604

190

Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories
Kim, H (Kim, Hyungjin), Park, J (Park, Jungjin), Kwon, MW (Kwon, Min-Woo), Lee, JH (Lee, Jong-Ho), Park, BG (Park, Byung-Gook)
IEEE ELECTRON DEVICE LETTERS, 201603