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151
Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array
김다영, 김태현, 최윤영, 이근호, 이정원, 선우경, 박병국, 김형진, 신형순
IEEE ACCESS, 202108
152
3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system
NANOTECHNOLOGY, 202107
153
Architecture and process integration overview of 3D NAND flash technologies
APPLIED SCIENCES-BASEL, 202107
154
Quantized weight transfer method using spike-timing-dependent plasticity for hardware spiking neural network
APPLIED SCIENCES-BASEL, 202102
155
Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device
NANOMATERIALS, 202101
156
AND flash array based on charge trap flash for implementation of convolutional neural networks
IEEE ELECTRON DEVICE LETTERS, 202011
157
Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
APPLIED PHYSICS LETTERS, 202011
158
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
APPLIED PHYSICS LETTERS, 202010
159
Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system,
IEEE ACCESS, 202010
160
A strong physically unclonable function with >280 CRPs and <1.4% BER using passive ReRAM technology
Mahmood R. Mahmoodi, Zahra Fahimi, Shabnam Larimian, Hussein Nili, 김형진, Dmitri Strukov
IEEE SOLID-STATE CIRCUITS LETTERS, 202007
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