발행물
컨퍼런스
ENGE 2024
2024.11
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High performance of ALD based Indium Tin Oxide Thin Film Transistor At sub-5nm-channel thickness
Annealing Free Atomic Layer Deposited InGaZnOx Thin Film Transistor with 39.8 cm2 V-1s-1 High Field-Effect Mobility
Non-volatile Anti-ferroelectric (Hf, Zr)O2 Thin Film for Lowpower and High-endurance Applications Utilizing Defect Engineering in Sputtering
Low temperature (≤400 ℃) crystallization in ferroelectric hafnium zirconium oxide via DUV irradiation
ECS Prime 2024
2024.10
An Investigation on the Low Voltage Ferroelectric HZO Capacitor Deposited on Phase-Controlled W Electrode