Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films
Dong Hyun Lee, Geun Taek Yu, Ju Yong Park, Se Hyun Kim, Kun Yang, Geun Hyeong Park, Jin Ju Ryu, Je In Lee*, Gun Hwan Kim*, Min Hyuk Park*
Acta Materialia, 2022
82
Binary Ferroelectric Oxides for Future Computing Paradigms
Min Hyuk Park*, Daewoong Kwon*, Uwe Schroeder, Thomas Mikolajick*
MRS Bulletin, 2021.12
83
Interfacial Engineering of Mo/Hf0.3Zr0.7O2/Si Capacitor Using Direct Scavenging Effect of Thin Ti layer
Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Dong Hyun Lee, Ju Yong Park, Kun Yang, Eun Been Lee, Je In Lee*, Min Hyuk Park*
Chemical Communications, 2021.12
84
A brief review on the ferroelectric fluorite-structured nanolaminate
Kun Yang, Ju Yong Park, Dong Hyun Lee, Se Hyun Kim, Geun Taek Yu, Geun Hyeong Park, Eun Been Lee, Je In Lee*, Min Hyuk Park*
Korean Journal of Metals and Materials, 2021.11
85
Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal Reddy*, Min Hyuk Park, Chel-Jong Choi*
Applied Physics A, 2021.10
86
Improved Ferroelectricity in Hf0.5Zr0.5O2 by Inserting an Upper HfOxNy Interfacial Layer
Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Min Hyuk Park*, Cheol Seong Hwang*