발행물
컨퍼런스
E-MRS Spring Meeting
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The Electrical Characteristics of NVM with Phosphorus Doped Si NCs
Resistance Switching Characteristics of Pr0.7Ca0.3MnO3 Film with SrRuO3 Buffer Layer Enhanced by Growth Temperature and Post-annealing for Resistance Random Access Memory Applications
Effective Purification of Double-Walled Carbon Nanotubes
Silicon Nitride Film Containing Silicon Quantum Dots Deposited by Cat-CVD at Temperatures Below 200℃
Memory Characteristics of Metallic nano-dots as charge storage nodes