,

The Electrical Properties of FET with n-doped Si nanocluster

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Resistance Switching of Pr0.7Ca0.3MnO3 Film with SrRuO2 Buffer Layer for Resistance Random Access Memory

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H2 Dilution Effect on The Gap States of SiNx Films Deposited by Cat-CVD Using SiH4/NH3/H2 at Low Temperature (<200℃)

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The influence of working pressure on the deposition of poly-Si films by Catalytic CVD at Low temperatures (<200 ℃)

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Optical & Electrical Properties of SiNx Films deposited by Catalytic CVD at a Low Temperature (<200℃)