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Formation of Silicon Nano-dot Embedded in Silicon Nitride by PECVD at 200℃

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약산을 이용한 단중벽 탄소나노튜브의 효과적인 정제

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Nonvolatile Memory Properties of Si-nanocluster Floating Gate Transistor-cell

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Direct Deposition of poly-Si Films by Catalytic CVD at Low Temperatures (<200 ℃)

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H2 Dilution Effect on Optical & Electrical Properties of Silicon Nitride Films deposited at a Low Temperatrue