발행물
컨퍼런스
제58회 한국진공학회 동계정기학술대회
2020
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Analysis on interface trap density of MOS capacitor with Al-doped HfO2 insulation layer
IEEE Electron Devices Technology and Manufacturing (EDTM) conference
Yield estimation of NCFET-based 6-T SRAM
NANO KOREA 2020
3D Phase-Field simulation of Ferroelectric switching
Impact of annealing conditions on the resistive switching characteristics of TiN/HfO2:Al/Si ReRAM devices
Characterization of HfO2/Al2O3 threshold switching device