발행물
컨퍼런스
IEEE International Memory Workshop
2020
,
Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2020
Yield estimation of NCFET-based 6-T SRAM
한국반도체학술대회
Sensitivity Analysis of NCFET-based 6-T SRAM
Digital Inverter with positive feedback field effect transistor
Investigation of Interface Trap Density by Low Frequency Noise and Subthreshold Slope