발행물
컨퍼런스
한국반도체학술대회
2020
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Analysis of negative capacitance gate-all-around junctionless nanowire FET considering work function variation
한국진공학회 동계
Experimental study on the electrical characteristics of ferroelectric-gated FinFET
Experimental investigation on time-resolved electrical characteristic in ferroelectric-gated FinFET
Characteristic analysis of single SiOx layer ReRAM devices with thermal annealing and partial pressure
Investigating the impact of line-edge-roughness (LER) on off-current distribution for FinFET device