발행물
컨퍼런스
19th Korean Conference on Semiconductors
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Cross-bar resistive memory using TiO2 thin films
The effect of thermal budget on the insulating properties of HfO2 on Ge substrate
Semiconductor Interface Specialists Conference
Effects of passivation layers and deposition temperature on electrical properties of atomic layer deposited HfO2 on Ge substrate
IEEE 42nd Semiconductor Interface Specialists Conference (SISC)
Cross-bar resistive memory using TiO2 thin film
Comparison of modulation behaviors of flat band voltage and work function in TiN/HfO2/La gate stacked on Si and Ge