발행물
컨퍼런스
International Thin-Film Transistor Conference (ITC) 2011
2004
,
The property changes in solution-processed tin zinc oxide semiconductor depending on residual ligands after annealing process
International Display Workshop (IDW) 2010
2003
Solution process for metal oxide thin film transistors under 350°C post-annealing
Materials Research Society (MRS) 2010 fall
Effect of yttrium composition ratio on solution-processed hafnium oxide gate insulator for thin-film transistors
Realization of quenching effect on the solution-processed InGaZnO thin film
International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM) 2010
2027
The formation of Ba incorporated InZnO lattice by solution process for thin-film transistors