발행물
컨퍼런스
Atomic Layer Deposition (ALD) 2017, Denver, USA
2018
,
Novel in-situ electrical characterization of the atomic layer deposition process on 2D transition metal dichalcogenides transistors
IEEE International Memory Workshop (IMW) 2017
2017
Low temperature (400°C) ferroelectric Hf0.5Zr0.5O2 capacitors for next-generation FRAM applications
The Minerals, Metals & Materials Society (TMS) 2017
2002
The effect of H2O vs. O3 as the ALD oxidant on the ferroelectric phase transition of hafnium-zirconium oxide
Materials Research Society (MRS) 2016 fall
Repair techniques for indium-gallium-zinc-oxide thin-film transistors: a comparison between vacuum and solution processes
Society for Information Display (SID) 2015
2004
Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique