Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits.
Bukke, R.N., Syzgantseva, O.A., A. Syzgantseva, M. et al.
Nat Electron, 2024
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Growth of High Quality Polycrystalline InGaO Thin Films by Spray Pyrolysis for Coplanar Thin-Film Transistors on Polyimide Substrate.
Rabbi, Md Hasnat, et al.
Journal of Alloys and Compounds, 2024
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Generation of InGaZnO Nanoparticle by Ar/O2 Plasma Exposure for Performance Improvement of Oxide TFTs.
Jeong, Myeonggi, et al.
IEEE Transactions on Electron Devices, 2024
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An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide.
Islam, Md Mobaidul, et al.
ACS Applied Electronic Materials, 2024
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Low-Temperature Poly-Si Thin-Film Transistor with High-k ZrAlOx Gate Insulator with SiO2 Blocking Layer.
Y. Kim, B. Jung, M. M. Islam, B. Kim, J. Jang
Adv. Mater. Technol., 2025
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A Study on High Performance, Dual-Gate a-IZO/a-IGZTO TFTs with Excellent Stability.
Nahar, Sabiqun, et al.
IEEE Electron Device Letters, 2024
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Saturation Mobility of 100 cm2 V–1 s–1 in ZnO Thin-Film Transistors through Quantum Confinement by a Nanoscale In2O3 Interlayer Using Spray Pyrolysis.
Saha, Jewel Kumer, and Jin Jang
ACS nano, 2024
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Bottom-gate Poly-Si Thin Film Transistors Fabricated by Blue Laser Diode Annealing and Their Reliability Under DC and AC Bias Stresses.
Billah, Mohammad Masum, et al.
IEEE Electron Device Letters, 2024
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One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm2 V−1 s−1 Mobility and Excellent Bias Stabilities by Using Offset Engineering.
M. H. Rabbi, M. R. M. Arnob, S. Nahar, A. Tooshil, J. Jang
Adv. Funct. Mater., 2024
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High Memory Window, Dual-Gate Amorphous InGaZnO Thin-Film Transistor with Ferroelectric Gate Insulator.
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