Robust Oxide Thin-Film Transistors with Embedded CNT Buried Layer for Stretchable Electronics

Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors

Ten micrometer pixel, quantum dots color conversion layer for high resolution and full color active matrix micro‐LED display

Quantum-dot Light Emitting Diodes with Perfluorinated Inomer doped Copper-Nickel Oxide Hole Transporting Layer

Li and Mg Co-doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

Low Work Function 2.81 eV Rb2CO3-Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting Diodes

High Hall Mobility P-type Cu2SnS3-Ga2O3 with a High Work Function

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600°C

Reduction of Parasitic Capacitance in Indium‐Gallium‐Zinc Oxide (a‐IGZO) Thin‐Film Transistors (TFTs) without Scarifying Drain Currents by Using Stripe‐Patterned Source/Drain Electrodes

Tensile Stress Effect on Performance of a-IGZO TFTs With Source/Drain Offsets