Excellent Mechanical Durability of In‐Folding Stress of Poly‐Si Thin‐Film Transistor on Plastic Substrate Compared with Out‐Folding: Generation of Gate Leakage Currents in Flexible Poly‐Si Thin‐Film Transistor by Out‐Folding and Bias‐Temperature Stress
Kim, D., Billah, M. M., Lee, S., Siddik, A. B., Cho, Y. J., Jang, J., Lee, J., Lee, Y., & Shin, J.
Advanced Engineering Materials, 2020