Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors
Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Lai Zhao, Soo Young Choi
Journal of the Electron Device Society, 2019
52
Eliminating oxygen vacancies in SnO2 films via aerosol-assisted chemical vapour deposition for perovskite solar cells and photoelectrochemical cells
Mohamad Firdaus Mohamad Noh, Nurul Affiqah Arzaee, Javad Safaei, Nurul Aida Mohamed, Hyeong Pil Kim, Abd Rashid Mohd Yusoff, Jin Jang, Mohd Asri Mat Teridi
Journal of Alloys and Compounds, 2018
53
High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress
Jiseob Lee, Dongjin Kim, Suhui Lee, Johann Cho, Hyungryul Park, Jin Jang
IEEE ELECTRON DEVICE LETTERS, 2019
54
High Performance of a-IZTO TFT by Purification of the Semiconductor Oxide Precursor
Ravindra Naik Bukke, Narendra Naik Mude, Jewel Kumer Saha, Jin Jang
Adv. Mater. Interfaces 2019, 6, 1900277, 2019
55
High Speed and Wider Swing, Level Shifter Using Low-Temperature Poly-Silicon Oxide TFTs
Abidur Rahaman, Duk Young Jeong, Jin Jang
IEEE ELECTRON DEVICE LETTERS, 2019
56
Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting
Suhui Lee, Yuanfeng Chen, Jeonggi Kim, Hyomin Kim, Jin Jang
J Soc Inf Display, 2019
57
Highly Stable, Solution-Processed Ga-Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment
Narendra Naik Mude, Ravindra Naik Bukke, Jewel Kumer Saha, Christophe Avis, Jin Jang
Adv. Electron. Mater. 2019, 1900768, 2019
58
Oxide Electronics Transferred on Stiff-Stripe/ PDMS Substrate for High-Resolution Stretchable Displays
Xiuling Li, Md. Mehedi Hasan, Hyo-Min Kim, Jin Jang
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019
59
Quasi-2D Organic Cation-Doped Formamidinium Lead Bromide (FAPbBr3) Perovskite Light-Emitting Diodes by Long Alkyl Chain, Organic Electronics, 6 January 2020
Hassan Alehdaghia, Anil Kanwatb,c, Mohammad Ziraka, Eric Moyenb*, Won-Chul Choib, Jin Jang
1970
60
Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers