International J. of High Speed Electronics and Systems, 2000
722
Amorphous silicon thin film transistor with a fluorinated silicon oxide ion stopper
장진
IEEE Elec. Dev. Lett., 2000
723
Application of Electrostatic bonding to field emission display vacuum packaging
장진
J. of the Electrochemical Society, 2000
724
Hydrogen-free diamond-like carbon deposited by a layer-by-layer technique using PECVD
장진
International J. of Modern Physics, 2000
725
Low photo-leakage current amorphous silicon thin--film transistor with a thin active layer
장진
J. Non Cryst. Solids, 2000
726
Performance improvement of polycrystalline thin-film transistor by adopting a very thin amorphous silicon buffer
장진
J. of Non-Crystalline Solids, 2000
727
A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization
장진
IEEE Elec. Dev. Lett., 2000
728
Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride
장진
IEEE Transactions on Electron Devices, 2000
729
Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amophous silicon
장진
J. of Appl. Phys., 2000
730
Examination of EL and PL properties of MCHM-PPV and MEH-PPV: a study towards introduction of a new series of thin film EL devices