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771
Very low temperature growth of polycrystalline silicon using SiF4/H2
장진
Sol. St. Commun., 1996
772
Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper
장진
IEEE Elctron Device Letter, 1996
773
Low off-state leakage current thin film transistor using Cl incorporated hydrogenated amorphous silicon
장진
Appl. Phys. Lett., 1996
774
Preparation of wide band microcrystalline silicon film by using SiH2Cl2
장진
Appl. Phys. Lett., 1996
775
Low temperature fabrication of APCVD a-Si thin film transistors with ion doped layer
장진
J. Non-Cryst. Sol., 1996
776
Hydrogen passivation of dopants in amorphous silicon
장진
J. Non-Cryst. Solids, 1996
777
Low Dielectric Constant Fluorinated Oxide Films Prepared byRemote Plasma Chemical Vapor Deposition
장진
Jap. J. of Applied Physics, 1996
778
Change in bulk defect density of hydrogenated amorphous silicon by bias stress in thin film transistor structures
장진
Appl. Phys. Lett., 1996
779
Creation of interface states between SiO2 and a-Si:H thin film transistors by bias-stress
장진
J. Non-Cryst. Solids, 1996
780
Effect of H2 dilution on the growth of low temperature as-deposited poly-Si films using SiF4/SiH4/H2 Plasma
장진
Journal of Applied Physics, 1995
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