장진 교수 연구실
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781
Polycrystalline silicon thin film transistors deposited at low substrate temperature by remote plasma chemical Vapor deposition using.
장진
Appl. Phys. Lett., 1995
782
N-channel polycrystalline thin film transistors using as-deposited polycrystalline silicon and ion doping
장진
APS, 1995
783
Effect of Cl incorporation on the stability of Hydrogenated amorphous silicon
장진
APS, 1995
784
Temperature dependent characteristics of amorphous silicon thin film transistors with SiO2 gate insulator
장진
JKPS, 1995
785
Growth of microcrystalline silicon by remote plasma chemical vapor deposition without hydrogen dilution
장진
J.Appl.Phys., 1994
786
Performance improvement of amorphous silicon thin-film transistors with SiO2 gate insulator by N2 plasma treatment
장진
Appl.Phys.Lett., 1994
787
Annealing effects of low pressure mercury and excimer laser on degraded a-Si:H TFTs
장진
J.Non.Cryst Solids, 1994
788
Performance and stability of a-Si:H TFTs with SiO2 gate insulator
장진
Japan television society Technical Digest, 1994
789
Photo-induced changes of thermally stimulated conductivity spectra in un doped hydrogenated amorphous silicon.
장진
J. Non-Cryst. Solids, 1994
790
Highly stable amorphous-silicon indium-gallium-zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure
장진, M. Mativenga, 최재원, 허지호, 김효준
Journal of Information Display, 201103
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