제 36회 한국진공학회
Effect of Filament Temperature,Processing Pressure and CH4 gas on Silicon-Carbide Films at Low Temperatures by Cat-CVD
Europe Materials Research Society 2008 spring meeting
A High Rate Deposition of Nanocrystalline-Si Films at Low Temperatures (<200 ℃) by Catalytic CVD Technique
International Display Workshops
Effective Deposition of Nanocrystalline Silicon Thin Films at 200℃ by Catalytic CVD